李金钗

教育和工作经历 1998年9月～2002年 7月 厦门大学物理系 物理与电子信息类 攻读学士学位 2002年9月～2008年12月 厦门大学物理系 凝聚态物理 攻读博士学位 2009年8月～2010年12月 台湾交通大学光电工程系 博士后研究 2011年2月~2017年7月 厦门大学物理系 高级工程师 2017年8月至今 厦门大学物理系 教授级高级工程师 科研基金 国家自然科学基金面上项目，61874090，AlGaN基量子结构和器件中高电流密度诱导效应的调控，2019.01-2022.12，在研，主持 国家重点研发计划项目子课题，2018YFB0406702，基于微纳结构材料的单芯片全光谱LED技术研究，2018.07-2021.06，在研，主持 国家重点研发计划项目，2016YFB0400101，非平衡条件下AlGaN基量子结构的外延生长和深紫外发光规律，2016/06-2020/5，在研，参加 国家自然科学基金海峡两岸联合基金项目，U1405253，AlGaN基量子结构材料及其大功率深紫外光源，2015/01-2018/12，在研，参加 国家973计划项目，2012CB619301，AlGaN基UV发光材料及其器件应用，2012/01-2016/09，已结题，参加 代表性文章或专著 J. J. Zheng, J. C. Li*，Z. B. Zhong，W. Lin, L. Chen, K. Y. Li, X. H. Wang, C. L. Chou, S. Q. Li, J. Y. Kang, “Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs”, RSC Advances, 7: 55157~55162, 2017. J. Zhou, J. C. Li*, S. Q. Lu, J. Y. Kang, and W. Lin, “Characteristics of InN epilayers grown with H2-assistance”, AIP Advances, 7: 115207, 2017. L. Chen, J. J. Zheng, W. Lin, K. Y. Li, P. Sun, G. Y. Guo, J. C. Li, J. Y. Kang，Abnormal Radiative interband transitions in high-Al-Content AlGaN quantum wells induced by polarized orbitals, ACS Photonics, 4: 2197~2202, 2017. W. H. Yang, J. C. Li*, Y. Zhang, P. K. Huang, T. C. Lu, H. C.Kuo, S. P. Li, X. Yang, H. Y. Chen, D. Y. Liu, J . Y. Kang, “High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability”, Scientific reports, 4, 5166, 2014. K. Huang, N. Gao, C. Z. Wang, X. Chen, J. C. Li*, S. P. Li, X. Yang, J. Y. Kang, “Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localized surface plasmon”, Scientific reports, 4, 4380, 2014. N. Gao, W. Lin, X. Chen, K. Huang, S. P. Li, J. C. Li, H. Y. Chen, X. Yang, L. Ji, E. T. Yu and J. Y. Kang*, Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection, Nanoscale 6, 14733, 2014. W. H. Yang, J. C. Li*, W. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, Xu. Yang, and J. Y. Kang. “Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs”, AIP Advances., 3, 052013, 2013. J. C. Li*, G. L. Ji, W. H. Yang, P. Jin, H. Y. Chen, W. Lin, S. P. Li, and J . Y. Kang, “Emission Mechanism of High Al-content AlGaN Multiple Quantum Wells”. Chinese Journal of Luminescence. 37, 513, 2016. T. C. Zheng, W. Lin, R. Liu, D. J. Cai1, J. C. Li, S. P. Li and J. Y. Kang, “Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices”, Scientific reports, 2, 24, 2016. C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li*, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers”, Applied Physics Letters, 97,171106, 2011. C. H. Wang, S. P. Chang, H. W. Wang, J. C. Li*, W. T. Chang, Y. S. Lu, Z. Y. Li, H. C. Kuo, T. C. Lu, and S. C. Wang, “Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells”, Applied Physics Letters, 97, 181101, 2010. C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li*, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer”, Applied Physics Letters, 97, 261103, 2010. S. P. Chang, C. H. Wang, J. C. Li*, Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer”, Applied Physics Letters, 97, 251114, 2010. J. C. Li, T. C. Lu, H. M. Huang, W. W. Chan, H. C. Kuo, and S. C. Wang, “Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN MQWs”, Journal of Applied Physics, 108, 063508, 2010. J. C. Li, W. H. Yang, S. P. Li, H. Y. Chen, D. Y. Liu, and J. Y. Kang, “Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si--codoped AlxGa1-xN/AlyGa1-yN superlattices”, Applied Physics Letters, 95, 151113-1-151113-3, 2009. J. C. Li, W. Lin, W. H. Yang, W. Z. Cai, Q. F. Pan, X. J. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, J. F. Cai, X. Yu, and J. Y. Kang, “Design and epitaxy of structural III-nitrides”, Journal of Crystal Growth, 311(3), 478-481, 2009. J. C. Li, S. P. Li, and J. Y. Kang, “Quantized level transitions and modification in InGaN/GaN multiple quantum wells”, Applied Physics Letters, 92 (10), 101929-1-101929-3, 2008. J. C. Li, and J. Y. Kang, “Band engineering in Al0.5Ga0.5N/GaN superlattice by modulating Mg dopant”, Applied Physics Letters, 91 (15), 152106-1-152106-3, 2007. J. C. Li, and J. Y. Kang, “Polarization effect on p-type doping efficiency in Mg-Si codoped wurtzite GaN from the first-principles calculations”, Physical Review B, 71 (3), 035216-1-035216-4, 2005. J. C. Li, W. Lin, W. H. Yang, W. Z. Cai, Q. F. Pan, X. J. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, J. F. Cai, X. Yu, and J. Y. Kang, “Design and epitaxy of structural III-nitrides”, Journal of Crystal Growth, 311(3), 478-481, 2009.